1/9 january 2002 stP60NF06 stP60NF06fp n-channel 60v - 0.014 w - 60a to-220/to-220fp stripfet? power mosfet (1) i sd 60a, di/dt 400 a/ m s, v dd 24v, tj t jmax n typical r ds (on) = 0.014 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization description this power mosfet series realized with stmicro- electronics unique stripfet process has specifical- ly been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer application. it is also intended for any application with low gate charge drive requirements. applications n high-efficiency dc-dc converters n ups and motor control n automotive absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d stP60NF06 stP60NF06fp 60 v 60 v < 0.016 w < 0.016 w 60a 60a symbol parameter value unit stP60NF06 stP60NF06fp v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 60 37 a i d drain current (continuos) at t c = 100c 42 26 a i dm ( l ) drain current (pulsed) 240 148 a p tot total dissipation at t c = 25c 110 42 w derating factor 0.73 0.28 w/c dv/dt (1) peak diode recovery voltage slope 4 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature C65 to 175 c t j max. operating junction temperature to-220 1 2 3 1 2 3 to-220fp internal schematic diagram
stP60NF06 - stP60NF06fp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.36 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 30 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 30 v) 360 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 30 a 0.014 0.016 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 30 a 20 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1810 pf c oss output capacitance 360 pf c rss reverse transfer capacitance 125 pf
3/9 stP60NF06 - stP60NF06fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30 v, i d = 30 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 16 ns t r rise time 108 ns q g total gate charge v dd = 48v, i d =60a,v gs = 10v 49 66 nc q gs gate-source charge 18 nc q gd gate-drain charge 14 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 30 v, i d = 30 a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 43 20 ns ns t d(off) t f t c off-voltage rise time fall time cross-over time vclamp =48v, i d = 60 a r g =4.7 w, v gs = 10v (see test circuit, figure 3) 40 12 21 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 60 a i sdm (2) source-drain current (pulsed) 240 a v sd (1) forward on voltage i sd = 60 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a, di/dt = 100a/s, v dd = 25v, t j = 150c (see test circuit, figure 5) 73 182 5 ns nc a safe operating area for to-220fp safe operating area for to-220
stP60NF06 - stP60NF06fp 4/9 thermal impedence for to-220 thermal impedence for to-220fp transconductance static drain-source on resistance transfer characteristics output characteristics
5/9 stP60NF06 - stP60NF06fp normalized gate threshold voltage vs temperature source-drain diode forward characteristics gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature
stP60NF06 - stP60NF06fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 stP60NF06 - stP60NF06fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stP60NF06 - stP60NF06fp 8/9 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
9/9 stP60NF06 - stP60NF06fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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